Ion orbits in plasma etching of semiconductors

Reactive ion etching

The reactive ion etching ofInP, InGaAs, and InAIAs in CClzF2/02 or C2R(/H2 discharges was investigated as a function of the plasma parameters pressure, power density, flow rate, and relative composition. The etch rates of these materials are a factor of 3-5 X faster in CC12F 2/0 2 (-600--1000 AminJ ) compared to CzHJH2 (160-320 AminI ). Significantly smoother morphologies are obtained with C2H6...

Deep Reactive Ion Etching (DRIE)

Ionization‐enhanced diffusion: Ion implantation in semiconductors

An experimental study of the reactive ion etching (RIE) of GaP using BCl3 plasma processing

A detailed study of the reactive ion etching (RIE) of GaP, through BCl3 based plasma processing is reported. We discuss the effects on the etch ate through the studies of RF power, reactant and carrier gas (Ar) flow and chamber pressure. Atomic force microscopy (AFM) characterization, long with photoluminescence (PL) spectroscopy, is used to investigate the surface quality and correlate the mat...

Reactive ion etching of GaN using WI3

Reactive ion etching with SiCl, and BCls of high quality GaN films grown by plasma enhanced molecular beam epitaxy is reported. Factors such as gas chemistry, flow rate, and microwave power affecting the etching rate are discussed. The etch rate has been found to be larger with BCls than with SiC14 plasma. An etch rate of 8.5 &s was obtained with the BCl, plasma for a plasma power of 200 W, pre...